dm t 3008 l fd f d atasheet number: ds 37638 rev. 2 - 2 1 of 7 www.diodes.com january 2015 ? diodes incorporated dm t 3008 l fd f advance information advanced information new product 30v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c 3 0 v 10 m ? @ v gs = 10 v 12.0 a 16 m? @ v gs = 4.5 v 10.4 a description this new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? general purpose interfacing switch ? power management functions features ? 0. 6 mm p rofile C i deal for l ow p rofile a pplications ? pcb f ootprint of 4mm 2 ? low gate threshold voltage ? low on - resistance ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note mechanical data ? case: u - dfn2020 - 6 ? case material: molded plastic, Dgreen molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.0065 grams ( a pproximate ) ordering information (note 4 ) part number marking reel size (inches) quantity per reel dmt 3008 lfdf - 7 t 3 7 3,000 dmt 3008 lfdf - 13 t 3 13 10 ,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information u - dfn2020 - 6 date code key year 201 4 2015 2016 2017 201 8 201 9 20 20 20 21 code b c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d t3 = product type marking code ym = date code marking y = year (ex: b = 20 14 ) m = month (ex: 9 = september) t3 y m equivalent circuit u - dfn2020 - 6 pin1 bottom view top view pin out bottom view d s g
dm t 3008 l fd f d atasheet number: ds 37638 rev. 2 - 2 2 of 7 www.diodes.com january 2015 ? diodes incorporated dm t 3008 l fd f advance information advanced information new product maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 3 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10.0 v steady state t a = +25c t a = +70c i d 12.0 9.5 a t<10s t a = +25c t a = +70c i d 13.6 11.0 a continuous drain current (note 6 ) v gs = 4.5 v steady state t a = +25c t a = +70c i d 10.4 8.4 a t<10s t a = +25c t a = +70c i d 11.9 9.6 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 70 a maximum body diode continuous current i s 2 a avalanche current (note 7 ) l = 0. 1mh i a s 8 a avalanche energy (note 7 ) l = 0. 1mh e a s 3.2 mj thermal characteristics total power dissipation (note 5) t a = +25c p d 0. 8 w t a = + 70 c 0. 5 thermal resistance, junction to ambient (note 5) s teady s tate r ja 156 c/w t<10s 116 total power dissipation (note 6 ) t a = +25c p d 2.1 w t a = + 70 c 1.3 thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 60.8 c/w t<10s 45 .0 thermal resistance, junction to case (note 6 ) r j c 13 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics ( note 8 ) drain - source breakdown voltage bv dss 30.0 gs = 0v, i d = 250 a j = + 25c i dss ? ds = 24 v, v gs = 0v gate - source leakage i gss gs = 20 v , v ds = 0v on characteristics ( note 8 ) gate threshold voltage v gs( th ) 1.0 ds = v gs , i d = 250 a ds(on) ? gs = 10 v, i d = 9.0 a gs = 4.5 v, i d = 8.5 a diode forward voltage v sd gs = 0v, i s = 2 a dynamic characteristic s (note 9 ) input capacitance c iss ds = 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 10 v ) q g d d = 1 0 v, i d = 30 a total gate charge ( v gs = 4.5 v ) q g gs gd d( on ) dd = 10 v, v gs = 10 v, r l = 0.67 g = 4.7 d = 15 a turn - on rise time t r d( off ) f rr f = 15 a , di /d t = 1 00a/ rr notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. i as and e as rating are based on low frequency and duty cycles to keep t j = + 25c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm t 3008 l fd f d atasheet number: ds 37638 rev. 2 - 2 3 of 7 www.diodes.com january 2015 ? diodes incorporated dm t 3008 l fd f advance information advanced information new product figure 1 typical output characteristics figure 2 typical transfer characteristics figure 3 typical on - resistance vs. drain current and gate voltage figure 4 typical transfer characteristic figure 6 on - resistance variation with temperature figure 5 typical on - resistance vs. drain current and temperature v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 10 12 14 16 i = 15a d t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 v = 4.5v gs i = 15a d v = 10v gs i = 15a d v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d t = 125c a 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 v = 5.0v ds t = -55c a t = 150c a t = 25c a t = 85c a v , drain -source voltage (v) ds figure 1 typical output characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v = 2.5v gs v = 2.3v gs v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0.011 0.012 0 3 6 9 12 15 18 21 24 27 30 v = 10v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a i , drain source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.005 0.006 0.007 0.008 0.009 0.01 0.011 0.012 0 3 6 9 12 15 18 21 24 27 30 v = 10v gs v = 4.5v gs
dm t 3008 l fd f d atasheet number: ds 37638 rev. 2 - 2 4 of 7 www.diodes.com january 2015 ? diodes incorporated dm t 3008 l fd f advance information advanced information new product figure 7 on - resistance variation with temperature figure 8 gate threshold variation vs. junction temperature figure 9 diode forward voltage vs. current figure 11 typical junction capacitance figure 10 typical drain - source leakage current vs. voltage figure 12 gate charge t , junction temperature (c) j figure 8 gate threshold variation vs. ambient temperature v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = -55c a t = 150c a t = 25c a t = 85c a t = 125c a c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 11 typical junction capacitance 10 100 1000 10000 0 5 10 15 20 25 30 f = 1mhz c iss c oss c rss v , drain-source voltage (v) ds figure 10 typical drain-source leakage current vs. voltage i , l e a k a g e c u r r e n t ( n a ) d s s 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 t = 150c a t = 125c a t = 85c a t = 25c a t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 -50 -25 0 25 50 75 100 125 150 v = 4.5v gs i = 15a d v = 10v gs i = 15a d q , total gate charge (nc) g figure 12 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 3 6 9 12 15 v = 10v ds i = 30a d
dm t 3008 l fd f d atasheet number: ds 37638 rev. 2 - 2 5 of 7 www.diodes.com january 2015 ? diodes incorporated dm t 3008 l fd f advance information advanced information new product figure 14 transient thermal resistance figure 13 soa, safe operation area v , drain-source voltage (v) ds figure 13 soa, safe operation area i , d r a i n c u r r e n t ( a ) d 0.01 0.1 1 10 100 0.01 0.1 1 10 100 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w r ds(on) limited t = 150c j (m ax ) t = 25c a v = 10v gs single pulse dut on 1 * mrp board t1, pulse duration time (sec) figure 14 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.5 d = 0.7 d = 0.9 r (t) = r(t) * r thja thja r = 154c/w thja duty cycle, d = t1/ t2
dm t 3008 l fd f d atasheet number: ds 37638 rev. 2 - 2 6 of 7 www.diodes.com january 2015 ? diodes incorporated dm t 3008 l fd f advance information advanced information new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. (1) package type: u - dfn2020 - 6 (type f) u - dfn2020 - 6 (type f) dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 - - 0.15 b 0.25 0.35 0.30 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 d3 0.33 0.43 0.38 e 0.65 bsc e2 0.863 bsc e 1.95 2.05 2.00 e2 1.05 1.25 1.15 e3 0.65 0.75 0.70 l 0.225 0.325 0.275 z 0.20 bsc z1 0.110 bsc all dimensions in mm suggested pad layout please see ap0200 1 at http://www.diodes.com/datasheets/ap0200 1 .pdf for the latest version. (1) package type: u - dfn2020 - 6 (type f) dimensions value (in mm) c 0.650 x 0.400 x1 0.480 x2 0.950 x3 1.700 y 0.425 y1 0.800 y2 1.150 y3 1.450 y4 2.300 pin1 y4 y2 y x c x3 y1 x1 x2 y3 d d2 e e b l e2 a a3 seating plane a1 z(4x) e2 e3 d3 z1
dm t 3008 l fd f d atasheet number: ds 37638 rev. 2 - 2 7 of 7 www.diodes.com january 2015 ? diodes incorporated dm t 3008 l fd f advance information advanced information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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